si7852ad| Datasheet

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

Si7852ADP_RC
Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.

R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance ( C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 9.3175 1.7290 6.4796 47.4739 Ambient 303.2258 m 3.0667 m 52.0372 m 1.3756 Case 467.3319 m 793.1223 m 656.8746 m 82.6712 m Case 3.2992 m 20.4434 m 23.0380 m 2.5581 m Foot N/A N/A N/A N/A Foot N/A N/A N/A N/A

Thermal Capacitance (Joules/ C)

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.

Document Number: 69800 Revision: 22-Oct-07

www.vishay.com 1