sihfz10| Datasheet

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IRFZ10, SiHFZ10
Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 11 3.1 5.8 Single
D

FEATURES
60 0.20

Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available

Available

RoHS*
COMPLIANT

TO-220

DESCRIPTION
Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

S G D
S N-Channel MOSFET

ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRFZ10PbF SiHFZ10-E3 IRFZ10 SiHFZ10

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 C EAS PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw VGS at 10 V TC = 25 C TC = 100 C SYMBOL VGS ID IDM LIMIT 20 10 7.2 40 0.29 47 43 4.5 - 55 to + 175 300d 10 1.1 W/ C mJ W V/ns C lbf in N m A UNIT V

Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 C, L = 1.8 mH, RG = 25 , IAS = 7.2 A (see fig. 12). c. ISD 10 A, dI/dt 90 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90363 S-81393-Rev. A, 07-Jul-08 www.vishay.com 1