sqm85n15| Datasheet

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SQM85N15-19
Vishay Siliconix

Automotive N-Channel 150 V (D-S) 175 C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration 150 0.0019 85 Single
D

FEATURES
Halogen-free TrenchFET Power MOSFET Package with Low Thermal Resistance

RoHS
COMPLIANT

AEC-Q101 RELIABILITY
Passed all AEC-Q101 Reliability Testing Characterization Ongoing

TO-263

D S S N-Channel MOSFET

Top View

ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free TO-263 SQM85N15-19-GE3

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Energy Single Pulse Avalanche Current Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 C TA = 25 C TC = 25 C TC = 125 C SYMBOL VDS VGS ID IS IDM EAS IAS PD TJ, Tstg LIMIT 150 20 85 50 85 180 125 70 375 3.75 - 55 to + 175 mJ A W C A UNIT V

THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width 300 us, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). PCB Mountc SYMBOL RthJA RthJC LIMIT 40 0.4 UNIT C/W

Document Number: 68668 S-81563-Rev. A, 23-Oct-08

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