sud50n02| Datasheet

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SUD50N025-4m5P_RC
Vishay Siliconix

R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice, these values have matching characteristic curves to the single-pulse transient thermal impedance curves for the MOSFET. These RC values can be used in the P-SPICE simulation to evaluate the thermal behavior of the MOSFET junction temperature under a defined power profile. These techniques are described in Application Note AN609, "Thermal Simulation of Power MOSFETs on the P-Spice Platform."

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance ( C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient N/A N/A N/A N/A Ambient N/A N/A N/A N/A Case 297.2010 m 314.3634 m 1.3649 23.5356 m Case 2.2842 m 2.3781 m 6.4848 m 830.6000 u Foot N/A N/A N/A N/A Foot N/A N/A N/A N/A

Thermal Capacitance (Joules/ C)

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.

Document Number: 68850 Revision: 16-Jul-08

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