sup85n10| Datasheet

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SUP/SUB85N10-10
Vishay Siliconix

N-Channel 100-V (D-S) 175 C MOSFET

PRODUCT SUMMARY
V(BR)DSS (V) 100 rDS(on) () 0.0105 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A) 85a

FEATURES
TrenchFET Power MOSFET 175 C Maximum Junction Temperature
Available

RoHS*
COMPLIANT

TO-220AB
D

TO-263

G DRAIN connected to TAB G G D S Top View SUP85N10-10 D S S N-Channel MOSFET

Top View SUB85N10-10

ORDERING INFORMATION
Package TO-220AB TO-263 Tin/Lead Plated SUP85N10-10 SUB85N10-10 Lead (Pb)-free SUP85N10-10-E3 SUB85N10-10-E3

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energyb TC = 25 C TC = 125 C L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 100 20 85a 60a 240 75 280 250c 3.75 - 55 to 175 Unit V

A mJ W C

TC = 25 C (TO-220AB and TO-263) Maximum Power Dissipationb TA = 25 C (TO-263)d Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient Junction-to-Case Notes: a. Package limited. b. Duty cycle 1 %. c. See SOA curve fo voltage derating. d. When mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71141 S-61008 Rev. D, 12-Jun-06 www.vishay.com 1 PCB Mount (TO-263)d Free Air (TO-220AB) Symbol RthJA RthJC Limit 40 62.5 0.6 Unit C/W